%0 Journal Article
%T AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition<br>
%A BI Zhi-Wei
%A HAO Yue
%A FENG Qian
%A GAO Zhi-Yuan
%A ZHANG Jin-Cheng
%A MAO Wei
%A ZHANG Kai
%A MA Xiao-Hua
%A LIU Hong-Xia
%A YANG Lin-An
%A MEI Nan
%A CHANG Yong-Ming
%A <br>
%J 中国物理快报
%D 2012
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=3B8BF30E16FD5CB019C20EF204134704&yid=99E9153A83D4CB11&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0