%0 Journal Article
%T Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD
%A ZHAO Mei
%A CHEN Xiao-Long
%A WANG Wen-Jun
%A ZHANG Zhi-Hua
%A XU Yan-Ping
%A <br>赵梅
%A 陈小龙
%A 王文军
%A 张志华
%A 许燕萍
%J 中国物理快报
%D 2007
%I 
%X Ground by mechanical ball milling under certain conditions, β-Ga2O3 powders can transit to ε-Ga2O3 ones. As starting materials, Ga2O3 powders treated by different methods are used to prepare GaN nanomaterials. It is found that the morphologies of GaN nanomaterials are quite different due to the phase transition of Ga2O3 from β-Ga203 to ε-Ga203.
%K 81
%K 05
%K Ea
%K 81
%K 16
%K -c<br>CVD
%K 相位转移
%K 初始材料
%K 纳米材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D4808183F1587362848C0ED&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=5D311CA918CA9A03&sid=C60F9D75D8506098&eid=B9A14123527DFCC6&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0