%0 Journal Article
%T A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates<br>
%A SONG Shi-Wei
%A LIANG Hong-Wei
%A LIU Yang
%A XIA Xiao-Chuan
%A SHEN Ren-Sheng
%A LUO Ying-Min
%A DU Guo-Tong
%A <br>
%J 中国物理快报
%D 2012
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=4CFB0EE1AD3DD1DF7AE6C0C5A1CC1DC6&yid=99E9153A83D4CB11&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0