%0 Journal Article
%T Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements<br>
%J 中国物理快报
%D 2009
%I 
%K 73
%K 30
%K +y
%K 73
%K 40
%K -c
%K 73
%K 40
%K Ei<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=0401CFCC1E19910DF772B129FB9197FC&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=B31275AF3241DB2D&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0