%0 Journal Article
%T Development and Characterization of Metal-Insulator-Metal Capacitors with SiNx Thin Films by Plasma-Enhanced Chemical Vapor Deposition<br>
%A WANG Cong
%A ZHANG Fang
%A KIM Nam-Young
%A <br>
%J 中国物理快报
%D 2010
%I 
%X We report the fabrication of high breakdown voltage metal-insulator-metal (MIM) capacitors with 200-nm silicon nitride deposited by plasma-enhanced chemical vapor deposition with 0.957 SiH4/NH3 gas mixing rate, 0.9 Torr working pressure, and 60 W rf power at 250o chamber temperature. Some optimized mechanisms such as metal source wiping, pre-melting and evaporation rate adjustment are used for increasing the yield of the MIM capacitors. N2 annealing and O2/H2 plasma pre-deposition treatment is proposed to increase the reliability of the MIM capacitors in high-temperature, high-pressure, and high-humidity environments. A 97% yield and up to 148 V breakdown voltage of a 13.06 pF MIM capacitor with 0.04 mm2 die area can be fabricated.
%K 81
%K 05
%K Dz
%K 81
%K 15
%K -z
%K 84
%K 32
%K Tt<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=10B4D61A5D9A3E7F49331DED1E0F6269&yid=140ECF96957D60B2&vid=DB817633AA4F79B9&iid=DF92D298D3FF1E6E&sid=DC330B09A33F1455&eid=273ADA1BCEFE8C00&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=21