%0 Journal Article
%T Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz<br>
%A CHENG Wei
%A JIN Zhi
%A SU Yong-Bo
%A LIU Xin-Yu
%A XU An-Huai
%A QI Ming
%A <br>
%J 中国物理快报
%D 2009
%I 
%K 85
%K 30
%K Pq
%K 71
%K 55
%K Eq<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=94397256ADE962871FDE9A445E17AD99&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=38B194292C032A66&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0