%0 Journal Article
%T Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD<br>
%A YU Chen-Hui
%A LIU Cheng
%A HAN Xiang-Yun
%A KANG Wei
%A FANG Yan-Yan
%A DAI Jiang-Nan
%A WU Zhi-Hao
%A CHEN Chang-Qing
%A <br>
%J 中国物理快报
%D 2011
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=C7FBD30228E6900A9BA9BAB4A5DE9331&yid=9377ED8094509821&vid=D3E34374A0D77D7F&iid=0B39A22176CE99FB&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0