%0 Journal Article
%T X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C60 and Si<br>X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si（100） Using C60 and Si
%A LIU Yan-Fang
%A LIU Jin-Feng
%A XU Peng-Shou
%A PAN Hai-Bin
%A <br>刘衍芳
%A 刘金峰
%A 徐彭寿
%A 潘海斌
%J 中国物理快报
%D 2007
%I 
%X The formation of silicon carbide upon deposition of C60 and Si on Si(100) surface at 850°C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction (RHEED). The C 1s, O 1s and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C--SiC
%K 61
%K 14
%K Hg
%K 71
%K 20
%K Ny
%K 79
%K 60
%K -i<br>X射线
%K 光电子
%K 光谱学
%K 高能量电子
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D4808186614A3922E35C568&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=DF92D298D3FF1E6E&sid=885CEFEC57DA488F&eid=B80136CCD8DCBAA1&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0