%0 Journal Article
%T Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2×1
%J 中国物理快报
%D 2009
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=B2CC3CADBD59F3E7EA20CCD6C56BD718&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=94C357A881DFC066&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0