%0 Journal Article
%T Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs1-ySby Grown on GaAs by Molecular Beam Epitaxy<br>
%A GAO Han-Chao
%A WANG Wen-Xin
%A JIANG Zhong-Wei
%A LIU Jian
%A YANG Cheng-Liang
%A WU Dian-Zhong
%A ZHOU Jun-Ming
%A CHEN Hong
%A <br>
%J 中国物理快报
%D 2008
%I 
%X A series of GaAs1-ySby epilayers are grown on GaAs substrates under different growth conditions. Different antimony compositions of samples withberyllium doping are obtained. A non-equilibrium thermodynamics model is used to calibrate and fit the Sb composition. Activation energy of 0.37eV for the dissociation process of Sb4 molecules is obtained. Carrier mobility and concentration of samples are influenced by the Sb composition. Quasi-qualitative analysis of mobility is used to explain the relations among Sb composition, carrier mobility and concentration. High resolution x-ray diffraction (HRXRD) rocking curves and Hall effects measurements are used to determine the crystal quality, carrier mobility and concentration.
%K 81
%K 15
%K Hi
%K 61
%K 05
%K Cp
%K 61
%K 72
%K U-
%K 61
%K 72
%K Uj<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=49D692A301B12D15D45AF433E946F8B0&yid=67289AFF6305E306&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=6AA94D9486B55C60&eid=CC918D68364E8A07&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0