%0 Journal Article
%T Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping<br>
%A SUN Jing-Chang
%A LIANG Hong-Wei
%A ZHAO Jian-Ze
%A BIAN Ji-Ming
%A FENG Qiu-Ju
%A WANG Jing-Wei
%A ZHAO Zi-Wen
%A DU Guo-Tong
%A <br>
%J 中国物理快报
%D 2008
%I 
%X ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.
%K 61
%K 72
%K Uj
%K 82
%K 33
%K Ya
%K 78
%K 60
%K Fi<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=8D1F589E53B4F1CAE056F00BEED750A0&yid=67289AFF6305E306&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=9438A87F25EF7EE7&eid=BD799A26D4E1A2C4&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0