%0 Journal Article
%T A Novel Kind of Transverse Micro-Stack High-Power Diode Bars<br>
%A ZHANG Lei
%A CUI Bi-Feng
%A LI Jian-Jun
%A GUO Wei-Lling
%A WANG Zhi-Qun
%A SHEN Guang-Di
%A <br>
%J 中国物理快报
%D 2008
%I 
%X Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large opticalcavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60W under 50A driving current and the slope efficiency reaches 1.55W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transversestrongly coupled devices.
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%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=1BE1D5AA442EDA9C22BDD50BFC7EB661&yid=67289AFF6305E306&vid=C5154311167311FE&iid=E158A972A605785F&sid=0414C929218EC5F4&eid=F7C51083F4D893E5&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0