%0 Journal Article
%T Investigation of Oxygen Vacancy and Interstitial Oxygen Defects in ZnO Films by Photoluminescence and X-Ray Photoelectron Spectroscopy
%A FAN Hai-Bo
%A YANG Shao-Yan
%A ZHANG Pan-Feng
%A WEI Hong-Yuan
%A LIU Xiang-Lin
%A JIAO Chun-Mei
%A ZHU Qin-Sheng
%A CHEN Yong-Hai
%A WANG Zhan-Guo
%A <br>范海波
%A 杨少延
%A 张攀峰
%A 魏鸿源
%A 刘祥林
%A 焦春美
%A 朱勤生
%A 陈涌海
%A 王占国
%J 中国物理快报
%D 2007
%I 
%X ZnO films prepared at different temperatures and annealed at 900°C inoxygen are studied by photoluminescence (PL) and x-ray photoelectronspectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (VO) and interstitial oxygen (Oi) before annealing and the quenching of the VO after annealing. By combining the two results it is deduced that the GL and YL are related to the VO and Oi defects, respectively.
%K 81
%K 05
%K Dz
%K 81
%K 15
%K Gh
%K 82
%K 80
%K Pv
%K 61
%K 72
%K Ji<br>氧空位
%K 间隙原子
%K ZnO
%K 薄膜
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D4808181A049C2EEE505E66&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=DF92D298D3FF1E6E&sid=8A651639C64E11EE&eid=4738D4FCFD09C3DC&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0