%0 Journal Article
%T Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces<br>
%A GAO Hai-Yong
%A YAN Fa-Wang
%A FAN Zhong-Chao
%A LI Jin-Min
%A ZENG Yi-Ping
%A WANG Guo-Hong
%A <br>
%J 中国物理快报
%D 2008
%I 
%X p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs withnano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.
%K 78
%K 66
%K Fd
%K 52
%K 77
%K Bn
%K 81
%K 65
%K Cf<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=CB91560DC2D15CEAFAE65EC2100DD467&yid=67289AFF6305E306&vid=C5154311167311FE&iid=9CF7A0430CBB2DFD&sid=ECDB70988BBA121B&eid=38B239F39FA14AB3&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0