%0 Journal Article
%T Modelling and Optimization for Deposition of SiOxNy Films by Radio-Frequency Reactive Sputtering
%A XU Wen-Bin
%A DONG Shu-Rong
%A WANG De-Miao
%A
徐文彬
%A 董树荣
%A 王德苗
%J 中国物理快报
%D 2007
%I
%X SiOxNy films are deposited by reactive sputtering from a Si target in Ar/O2/N2 atmospheres. In order to achieve the control of film composition and to keep a high deposition rate at the same time, a new sputtering model based on Berg's work is provided for the condition of double reactive gases. Analysis based on this model shows that the deposition process can easily enter thetarget-poisoning mode when the preset gas flow (N2 in this work) is too high, and the film composition will change from nitrogen-rich to SiO2-like with the increase of oxygen supply while keeping the N2 supply constant. The modelling results are confirmed in the deposition process of SiOxNy. Target self-bias voltages during sputtering are measured to characterize the different sputtering modes. FTIR-spectra and dielectric measurements are used to testify the model prediction of composition. Finally, an optimized sputtering condition is selected with the O2/N2 flow ratio varying from 0 to 1 and N2 supply fixed at 1 sccm. Average deposition rate of 17nm/min is obtained under this selected condition, which has suggested the model validity and potential for industry applications.
%K 81
%K 15
%K Aa
%K 81
%K 15
%K Cd
%K 77
%K 55
%K +f
模型化
%K 最佳化
%K SiOxNy
%K 薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D48081894C4D94CB5690E81&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=9CF7A0430CBB2DFD&sid=5716D925B9C15A5E&eid=99FACC118BD43F3F&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0