%0 Journal Article
%T Influence of Ring Oxidation-Induced Stack Faults on Efficiency in Silicon Solar Cells<br>
%A ZHOU Chun-Lan
%A WANG Wen-Jing
%A LI Hai-Ling
%A ZHAO Lei
%A DIAO Hong-Wei
%A LI-Xu-Dong
%A <br>
%J 中国物理快报
%D 2008
%I 
%X We observe a strong correlation between the ring oxidation-induced stack faults (OISF) formed in the course of phosphor diffusion and the efficiency of Czochralski-grown silicon solar cells. The main reason for ring-OISF formation and growth in substrate is the silicon oxidation and phosphorus diffusion process induced silicon self-interstitial point defect during POCl3 diffusion. The decreasing of minority carrier diffusion length in crystal silicon solar cell induced by ring-OISF defects is identified to be one of the major causes of efficiency loss.
%K 71
%K 72
%K -y
%K 61
%K 72
%K Nn<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=280972AEE550C3BD32DD375C3D47AC2E&yid=67289AFF6305E306&vid=C5154311167311FE&iid=5D311CA918CA9A03&sid=FBEDB421226BDB2C&eid=FAEB341CF9D0C324&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0