%0 Journal Article
%T Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor<br>
%A XU Cheng
%A LIU Bo
%A CHEN Yi-Feng
%A LIANG Shuang
%A SONG Zhi-Tang
%A FENG Song-Lin
%A WAN Xu-Dong
%A YANG Zuo-Ya
%A XIE Joseph
%A CHEN Bomy
%A <br>
%J 中国物理快报
%D 2008
%I 
%K 73
%K 61
%K Jc
%K 61
%K 72
%K Uj
%K 87
%K 15
%K Zg
%K 85
%K 30
%K Tv<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=F9A430766B6A359AD1A270B2BFEB0E0B&yid=67289AFF6305E306&vid=C5154311167311FE&iid=94C357A881DFC066&sid=47AB527E821B9862&eid=2F9DAF60B46325CC&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0