%0 Journal Article
%T Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers
%A XIA Zheng-Yue
%A HAN Pei-Gao
%A XU Jun
%A CHEN De-Yuan
%A WEI De-Yuan
%A MA Zhong-Yuan
%A CHEN Kun-Ji
%A XU Ling
%A HUANG Xin-Fan
%A <br>夏正月
%A 韩培高
%A 徐骏
%A 陈德媛
%A 韦德远
%A 马忠元
%A 陈坤基
%A 徐岭
%A 黄信凡
%J 中国物理快报
%D 2007
%I 
%X Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.
%K 73
%K 21
%K Ac
%K 73
%K 21
%K La
%K 78
%K 55
%K -m<br>钝化作用
%K 发光
%K Si/SiO2
%K 多层结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D4808188A4766C355369EA9&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=9CF7A0430CBB2DFD&sid=E6EF7D29EE8EFD11&eid=DD82672401351C7D&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0