%0 Journal Article
%T Correlation between Light Emissions from Amorphous-Si:H/SiO2 and nc-Si/SiO2 Multilayers<br>Correlation between Light Emissions from Amorphous-Si：H/SiO2 and nc-Si/SiO2 Multilayers
%A MA Zhong-Yuan
%A HAN Pei-Gao
%A LI Wei
%A CHEN De-Yuan
%A WEI De-Yuan
%A QIAN Bo
%A LI Wei
%A XU Jun
%A XU Ling
%A HUANG Xin-Fan
%A CHEN Kun-Ji
%A FENG Duan
%A <br>马忠元
%A 韩培高
%A 李卫
%A 陈德嫒
%A 魏德远
%A 钱波
%A 李伟
%A 徐骏
%A 徐岭
%A 黄信凡
%A 陈坤基
%A 冯端
%J 中国物理快报
%D 2007
%I 
%X We investigate the properties of light emission from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4nm and the interface states are well passivated by hydrogen. For the nc-Si/SiO2 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4nm. The role of hydrogen and oxygen is discussed in detail.
%K 73
%K 21
%K 73&prev_q=Ac')">73" target="_blank">Ac')">73
%K 21
%K Ac
%K 73
%K 20
%K r
%K 78&prev_q=')"> 78" target="_blank">')"> 78
%K 55
%K -m<br>光排放
%K 无定型
%K Si：H/SiO2
%K nc-Si/SiO2
%K 多层物理
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D4808183A80DFC0B8BB3CB7&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=DF92D298D3FF1E6E&sid=13AD3798DE81DFD6&eid=03ABEE521EC3BA7B&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0