%0 Journal Article
%T Three-Step Growth Optimization of AlN Epilayers by MOCVD<br>
%A PENG Ming-Zeng
%A GUO Li-Wei
%A ZHANG Jie
%A YU Nai-Sen
%A ZHU Xue-Liang
%A YANJian-Feng
%A GE Bin-Hui
%A JIA Hai-Qiang
%A CHEN Hong
%A ZHOU Jun-Ming
%A <br>
%J 中国物理快报
%D 2008
%I 
%X A three-step growth process is developed for depositing high-quality aluminium-nitride (AlN) epilayers on (001) sapphire by low pressure metalorganic chemical vapour deposition (LP-MOCVD). We adopt a low temperature (LT) AlN nucleation layer (NL), and two high temperature (HT) AlN layers with different V/III ratios. Our results reveal that the optimal NL temperature is 840--880°C, and there exists a proper growth switching from low to high V/III ratio for further reducing threading dislocations (TDs). The screw-type TD density of the optimized AlN film is just 7.86×106cm-2, aboutthree orders lower than its edge-type one of 2×109cm-2 estimated by high-resolution x-ray diffraction (HRXRD) and cross-sectional transmission electronmicroscopy (TEM).
%K 81
%K 05
%K Ea
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%K 15
%K Gh
%K 61
%K 10
%K -i
%K 68
%K 37
%K Lp<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=53CD15EE2D7DC18A91FE48EDE4A91696&yid=67289AFF6305E306&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=D53D369D01F50334&eid=3A9DC0CD8A6F1E57&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0