%0 Journal Article
%T Chemical Structure of HfO2/Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy<br>
%A TAN Ting-Ting
%A LIU Zheng-Tang
%A LIU Wen-Ting
%A ZHANG Wen-Hua
%A <br>
%J 中国物理快报
%D 2008
%I 
%X Interfacial chemical structure of HfO2/Si (100) is investigated using angle-resolved synchrotron radiation photoemission spectroscopy (ARPES). The chemical states of Hf show that the Hf 4f binding energy changes with the probing depth and confirms the existence of Hf--Si--O and Hf--Si bonds. The Si 2p spectra are taken to make sure that the interfacial structure includes the Hf silicates, Hf silicides and SiOx. The metallic characteristic of the Hf--Si bonds is confirmed by the valence band spectra. The depth distribution model of this interface is established.
%K 73
%K 20
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%K 55
%K +f
%K 82
%K 65
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%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=5D9A5FFA931A200FD5035168CE42F3F2&yid=67289AFF6305E306&vid=C5154311167311FE&iid=F3090AE9B60B7ED1&sid=47EC72B36674F0E9&eid=858F8C9C69F21D66&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0