%0 Journal Article
%T Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device
%A ZHONG Min
%A SONG Zhi-Tang
%A LIU Bo
%A FENG Song-Lin
%A CHEN Bomy
%A <br>钟旻
%A 宋志棠
%A 刘波
%A 封松林
%A 陈宝林
%J 中国物理快报
%D 2008
%I 
%X In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge2Sb2Te5 phase change films. We use reactive ion etching (RIE) as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, current--voltage characteristics test demonstrates that the set threshold voltage is reduced from 13V to 2.7V and the threshold current from 0.1mA to 0.025mA. Furthermore, we analyse the RIE cleaning principle andcompare it with the ultrasonic method.
%K 85
%K 40
%K -e
%K 81
%K 65
%K -b
%K 52
%K 77
%K Bn
%K 81
%K 65
%K Cf<br>相变存储器
%K 化学机械抛光
%K 活性离子蚀刻
%K 清洁制备方法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=4A3698BE1C1FE9C26CB0CF2CB1E08A47&yid=67289AFF6305E306&vid=C5154311167311FE&iid=0B39A22176CE99FB&sid=1CBB73E9593E8833&eid=231F9A307C169827&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0