%0 Journal Article
%T A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors
%A LI Miao
%A WANG Yan
%A <br>李淼
%A 王燕
%J 中国物理快报
%D 2007
%I 
%X A set of analytical models for the dc and small signal characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) are presented. A modified transferred-electron mobility model is adapted and a phenomenological low-field mobility model is developed. We calculate the channel charge considering the neutralization of donors and the contribution of free electrons in the AlGaN layer. The gate-to-source and gate-to-drain capacitances are obtained analytically, and the cut-off frequency is predicted. The models are implemented into the HSPICE simulator for the dc, ac and transient simulations and verified by experimental data for the first time. A high efficiency class-E GaN HEMT power amplifier is designed and simulated by the HSPICE to verify the applicability of our models.
%K 85
%K 30
%K De
%K 73
%K 40
%K Kp
%K 73
%K 61
%K Ey<br>直流电
%K 交流电
%K 晶体管
%K 电流迁移率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=9BF1E5DC433F0E4D4A808D1C3853190F&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=F3090AE9B60B7ED1&sid=020D872716A004E0&eid=43C416DFC6CCEF98&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0