%0 Journal Article
%T Theoretical Analysis of Current Crowding Effect in Metal/AlGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode<br>Theoretical Analysis of Current Crowding Effect in Metal/AIGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode
%A CHEN Jia-Rong
%A CHEN Wen-Jin
%A WANG Yu-Qi
%A QIU Kai
%A LI Xin-Hua
%A ZHONG Fei
%A YIN Zhi-Jun
%A JI Chang-Jian
%A CAO Xian-Cun
%A HAN Qi-Feng
%A DUAN Cheng-Hong
%A ZHOU Xiu-Ju
%A <br>陈家荣
%A 陈文锦
%A 王玉琦
%A 邱凯
%A 李新化
%A 钟飞
%A 尹志军
%A 姬长健
%A 曹先存
%A 韩奇峰
%A 段铖宏
%A 周秀菊
%J 中国物理快报
%D 2007
%I 
%X There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.
%K 81
%K 05
%K Ea
%K 85
%K 30
%K De
%K 82
%K 20
%K Wt
%K 73
%K 40
%K Lq<br>理论分析
%K 电流
%K 聚集效果
%K AlGaN
%K GaN
%K 金属
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D480818DDC044395687DA53&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=DF92D298D3FF1E6E&sid=7058971B95CBEC94&eid=2166C11758CAF1DD&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0