%0 Journal Article
%T High-Power Electroabsorption Modulator Using Intrastep Quantum Well
%A CHENG Yuan-Bing
%A PAN Jiao-Qing
%A ZHOU Fan
%A ZHU Hong-Liang
%A ZHAO Ling-Juan
%A WANG Wei
%A <br>程远兵
%A 潘教青
%A 周帆
%A 朱洪亮
%A 赵玲娟
%A 王圩
%J 中国物理快报
%D 2007
%I 
%X An electroabsorption modulator using the intrastep quantum well (IQW)active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency 10dB/V and low capacitance (<0.42pF), with which an ultra high frequency (>15GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.
%K 85
%K 30
%K Vw
%K 78
%K 66
%K -w<br>高能量电吸附
%K 调制器
%K 量子
%K 物理
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D48081871248CCE0E9C4BBC&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=DF92D298D3FF1E6E&sid=D80F1BE4CEC3C1BF&eid=E8101C99E403BAC0&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0