%0 Journal Article
%T Growth of a Novel Periodic Structure of SiC/AlN Multilayers by Low Pressure Chemical Vapour Deposition<br>Growth of a Novel Periodic Structure of SiC/AIN Multilayers by Low Pressure Chemical Vapour Deposition
%A ZHAO Yong-Mei
%A SUN Guo-Sheng
%A LI Jia-Ye
%A LIU Xing-Fang
%A WANG Lei ZHAOWan-Shun
%A LI Jin-Min
%A <br>赵永梅
%A 孙国胜
%A 李家业
%A 刘兴畸
%A 王雷
%A 赵万顺
%A 李晋闽
%J 中国物理快报
%D 2007
%I 
%X A novel lO-period SiC/A1N multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition （LPCVD）. The structure with total film thickness of about 1.45~m is deposited on a Si （111） substrate and shows good surface morphology with a smaller rms surface roughness of f.3 nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/A1N structure and periodic changes of depth profiles of C, Si, A1, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. To the best of our knowledge, this is the first report of growth of the SiC/AIN periodic structure using the home-made LPCVD system.
%K 81
%K 05
%K Zx
%K 81
%K 15
%K Gh
%K 82
%K 80
%K Ms<br>周期性构造
%K 低压
%K 化学蒸汽沉积物
%K 多层分析
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D4808180EDC0E3684681D72&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=B31275AF3241DB2D&sid=52BD3BD127FE3A27&eid=290C357E8EC0A94B&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0