%0 Journal Article
%T Optoelectronic Characteristics and Field Emission Properties of Indium-Doped Tin Oxide Nanowire Arrays
%A XUE Xin-Yu
%A SHI Song-Lin
%A LIN Zhi-Xian
%A ZHENG Ke-Lu
%A ZHANG Yong-Ai
%A GUO Tai-Liang
%A WANG Tai-Hong
%A <br>薛欣宇
%A 施松林
%A 林志贤
%A 郑可炉
%A 张永爱
%A 郭太良
%A 王太宏
%J 中国物理快报
%D 2007
%I 
%X Optoelectronic characteristics of individual indium-doped tin oxide （In-SnO2） nanowires are investigated by performing transport measurement with UV illumination on/off circles. The current rapidly increases from 0.15 to 55 nA under UV illumination, which is ascribed to the increase of carrier concentration and the decrease of surface depletion. Emcient and stable field emission is obtained from In-Sn02 nanowire arrays. The current density is up to 17mA/cm^2 at 3.4 V/μm, and the fluctuations are less than 1%. The emission behaviour is perfectly in agreement with the Fowler Nordheim theory. Our results imply that In-SnO2 nanowires are promising candidates for UV detectors and field emission displays.
%K 61
%K 46
%K +w
%K 85
%K 60
%K Gz
%K 85
%K 45
%K Fd<br>光电子特性
%K 场发射
%K 掺杂
%K 氧化物
%K 纳米金属丝
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=AF25522999DE114B727B66A974E0E842&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=59906B3B2830C2C5&sid=035549C148C077E8&eid=56323D40D8E4D8B0&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=20