%0 Journal Article
%T Transformation from β-Ga2O3 to GaN Nanowires via Nitridation
%A 王朋伟
%A 宋祎璞
%A 章新政
%A 徐军
%A 俞大鹏
%J 中国物理快报
%D 2008
%I 
%X Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission （around 740 nm） caused by generation of acceptor levels at the middle of the band gap of the β-Ga2O3 nanowires. Here we report that further heavy doping of nitrogen can transform the β-Ga2O3 nanowires completely into wurtzite structured GaN nanowires. Transmission electron microscopy （TEM）, x-ray diffraction （XRD） and Raman spectrum are used to evaluate the transition process. Both XRD and Raman analysis reveal that the monoclinic β-Ga2O3 nanowires start phase transformation at a temperature around 850℃ towards wurtzite structured GaN. Our results will be very helpful to profound our understanding of the doping induced effects and phase transformation in semiconductor compounds.
%K β-Ga2O3
%K GaN
%K 氮化物
%K 物质转换
%K 半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=30F67956A52722DB947C7DCAD79CB3DF&yid=67289AFF6305E306&vid=C5154311167311FE&iid=38B194292C032A66&sid=11924CB7A7AEB526&eid=8F39F7FDA07C2566&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=22