%0 Journal Article
%T Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes
%A WANG Xin-Hua
%A WANG Xiao-Liang
%A FENG Chun
%A XIAO Hong-Ling
%A YANG Cui-Bai
%A WANG Jun-Xi
%A WANG Bao-Zhu
%A RAN Jun-Xue
%A WANG Cui-Mei
%A <br>王新华
%A 王晓亮
%A 冯春
%A 肖红领
%A 杨翠柏
%A 王军喜
%A 王保柱
%A 冉军学
%A 王翠梅
%J 中国物理快报
%D 2008
%I 
%X Pt/AlGaN/AlN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3V at 300K is obtained at a fixed forward current after switching from N2 to 10%H2+N2. The sensor responses under different concentrations from 50ppm H2 to 10%H2+N2 at 373K are investigated. Time dependences of the device forward current at 0.5V forward bias in N2 and air atmosphere at 300 and 373K are compared. Oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity of the sensor are calculated.
%K 73
%K 61
%K Ey
%K 07
%K 07
%K Df
%K 73
%K 40
%K Ns<br>氢传感器
%K AlGaN/AlN/GaN肖特基二极管
%K 半导体器件
%K 制备
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=D4460D401B43EB010F43326F667AADDE&yid=67289AFF6305E306&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=4FE459D71E3BF8EB&eid=1A363081E1FF7014&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=2&reference_num=20