%0 Journal Article
%T Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures
%A ZHANG Ming-Lan
%A WANG Xiao-Liang
%A XIAO Hong-Ling
%A WANG Cui-Mei
%A RAN Jun-Xue
%A HU Guo-Xin
%A <br>
%J 中国物理快报
%D 2008
%I 
%X AlGaN/GaN heterostructures have been irradiated by neutrons with different fluences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low fluence of 6.13×1015cm-2, the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66×1016cm-2, the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of ns×μ ) of 2DEG to the defectsinduced by neutron irradiation. Raman measurements show that neutronirradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of ns×μ of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of GeGa transmuted from Ga and the recovery of displaced defects.
%K 61
%K 82
%K Fk
%K 61
%K 80
%K -x
%K 73
%K 40
%K Kp<br>中子照射
%K 空间电子气体
%K 异质结构
%K AlGaN/GaN
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=3042F33E1CC027057DDEF698DD7EA1E5&yid=67289AFF6305E306&vid=C5154311167311FE&iid=38B194292C032A66&sid=08628F47AB73D65E&eid=94D812A784CFA7CC&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0