%0 Journal Article
%T Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs
%A CHEN Chao
%A LIU Wei-Li
%A MA Xiao-Bo
%A SHEN Qin-Wo
%A SONG Zhi-Tang
%A LIN Cheng-Lu
%A <br>陈超
%A 刘卫丽
%A 马小波
%A 沈勤我
%A 宋志棠
%A 林成鲁
%J 中国物理快报
%D 2008
%I 
%X Highly arsenic-doped Si-on-insulator (SOI) substrate incorporated with buried MoSi2 layers is fabricated aiming at decreasing the collector series resistance of SiGe heterojunction bipolar transistors (HBTs) on SOI, thereby enhancing cutoff frequency (fT) performance and increasing the maximum value of fT (fTMAX). The fT performance at medium current is enhanced and current required for fT=15GHz is reduced by half. The value of fTMAX is improved by 30%.
%K 61
%K 82
%K Fk
%K 68
%K 55
%K Jk<br>高频异质结场效应晶体管
%K 硅化钼
%K 硅-绝缘体基底
%K 硅锗半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=B21516B395B8350F515677AD9B89CB8D&yid=67289AFF6305E306&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=0DEB7A8A66C33AAD&eid=F8035C8B7D8A4264&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=10