%0 Journal Article
%T Electrically Driven InAs Quantum-Dot Single-Photon Sources<br>
%A XIONG Yong-Hua
%A NIU Zhi-Chuan
%A DOU Xiu-Ming
%A SUN Bao-Quan
%A HUANG She-Song
%A NI Hai-Qiao
%A DU Yun
%A XIA Jian-Bai
%A <br>
%J 中国物理快报
%D 2009
%I 
%X Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80K
%K 68
%K 65
%K +g
%K 78
%K 66
%K Fd
%K 81
%K 05
%K Ea
%K 81
%K 15
%K Hi<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=0F4E2A8205AF09E01AD2C2E6F44FAC2C&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0