%0 Journal Article
%T Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness<br>
%A YANG Hong-Bin
%A ZHANG Xiang-Jiu
%A <br>
%J 中国物理快报
%D 2009
%I 
%X By using compositionally graded SiGe films as virtual substrates, tensile strained Si films with the strain of 1.5% and the threading dislocation density less than 1.0×105cm-2 are successfully grown in micron size windows by molecular beam epitaxy (MBE). The thickness of the virtual substrates was only 330nm. On the surface of the s-Si films no cross-hatched lines resulting from misfit dislocations could be observed. We attribute these results to the edge-induced strain relaxation of the epitaxial films in windows, and the patterned virtual substrates with compositionally graded SiGe films.
%K 81
%K 15
%K Hi
%K 61
%K 72
%K Ff
%K 78
%K 30
%K Er<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=9345C4206466B612A2F4B25F00D7E761&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=E158A972A605785F&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0