%0 Journal Article
%T P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation
%A HE Bin
%A CHEN Guang-Hua
%A LI Zhi-Zhong
%A DENG Jin-Xiang
%A ZHANG Wun-Jun
%A <br>
%J 中国物理快报
%D 2008
%I 
%X A boron nitride (BN)/silicon p-n heterojunction is fabricated by implanting beryllium (Be) ions into the BN films deposited by rf sputtering on n-type Si (111) substrates. The FTIR observations indicate that the films deposited have a mixed phase composition of sp2- and sp3-hybridized BN. Considering the thickness of the BN layer, the ion implantation is conducted at an ionenergy of 100keV with the dose of 5×1015cm-2. After annealing at a high temperature, the surface resistance of the BN film decreases significantly by 6 orders down to 1.2×105Ω. Space-charge-limited current characteristic, which indicates the existence of shallow traps in the film, is observed. Current-voltage measurements across the BN film and the Si substrate reveal a clearrectification feature, demonstrating the achievement of p-type doping of BN films by Be ion implantation.
%K 61
%K 72
%K Vv
%K 73
%K 40
%K Kp
%K 72
%K 20
%K -i
%K 81
%K 15
%K Cd<br>铍离子注入
%K 氮化硼/硅异质结
%K 制备方法
%K 半导体薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=DDBF142CA7CEF4A93431E6415F478F7A&yid=67289AFF6305E306&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=D5C73DEF4CF8FAF3&eid=8B59EA573021D671&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=31