%0 Journal Article
%T High Speed 2×2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs
%J 中国物理快报
%D 2009
%I 
%X A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80mA, the extinction ratio exceeds 25dB at 1.55μm. The polarization sensitivity of the crosstalk is within ± 0.5dB. The switching speed is below 10ns. The flat response spectrum throughout the 1542-1562nm wavelength range indicates that this device is insensitive to wavelength.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=2C08068EED1433F05FE9513B6769C803&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=38B194292C032A66&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0