%0 Journal Article
%T Atomic Diffusion in Cu/Si (111) and Cu/SiO2/Si (111) Systems by Neutral Cluster Beam Deposition<br>
%A CAO Bo
%A LI Gong-Ping
%A CHEN Xi-Meng
%A CHO Seong-Jin
%A KIM Hee
%A <br>
%J 中国物理快报
%D 2008
%I 
%X The Cu films are deposited on two kinds of p-type Si (111) substrates by ionized cluster beam (ICB) technique. The interface reaction and atomic diffusion of Cu/Si (111) and Cu/SiO2/Si (111) systems are studied at differentannealing temperatures by x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results are obtained: For the Cu/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230°C. The diffusion coefficients of the samples annealed at 230°C and 500°C are 8.5×10-15cm2.s-1 and 3.0×10-14cm2.s-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2/Si (111) samples prepared by neutral clusters, the interdiffusion of Cu and Si atoms occurs and copper silicides areformed when annealed at 450°C. The diffusion coefficients of Cu in Si are calculated to be 6.0×10-16cm2.s-1 at 450°C, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.
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%K 35
%K Fx
%K 82
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%K Yc
%K 61
%K 10
%K Nz<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=6B17FB6AFF139AC4A3D6950B8A67B322&yid=67289AFF6305E306&vid=C5154311167311FE&iid=E158A972A605785F&sid=14475B1A66930D94&eid=A41D5AE06B0DB66D&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0