%0 Journal Article
%T Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy
%J 中国物理快报
%D 2009
%I 
%X We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm2 ridge waveguide laser, the lasing wavelength is centred at 1.508μm and the threshold current density is 667A/cm2 under pulsed operation. The pulsed lasers can operate up to 286K.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=EE7643C65CB406D4C844C11DCBFF7B11&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=CA4FD0336C81A37A&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0