%0 Journal Article
%T Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure<br>
%A HUANG Jian
%A CHEN Kun-Ji
%A FANG Zhong-Hui
%A GUO Si-Hua
%A WANG Xiang
%A DINGHong-Lin
%A LI Wei
%A HUANG Xin-Fan
%A <br>
%J 中国物理快报
%D 2009
%I 
%K 73
%K 63
%K Kv
%K 73
%K 40
%K Qv
%K 73
%K 43
%K Jn<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=3F93068B4C19EEA2E67B0501412D61E4&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=38B194292C032A66&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0