%0 Journal Article
%T Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method
%A LIU Qi-Bin
%A SONG Zhi-Tang
%A ZHANG Kai-Liang
%A WANG Liang-Yong
%A FENG Song-Lin
%A CHEN Bomy
%A <br>刘奇斌
%A 宋志棠
%A 张楷亮
%A 王良咏
%A 封松林
%A CHEN
%A Bomy
%J 中国物理快报
%D 2006
%I 
%X A damascene structure of phase change memory (PCM) is fabricated successfully with the chemical mechanical polishing (CMP) method, and the CMP of Ge2Sb2Te5 (GST) and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy (SEM) and an energy dispersive spectrometer (EDS). The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90mA and 1.15mA.
%K 85
%K 40
%K -z
%K 85
%K 40
%K -e
%K 81
%K 65
%K -b<br>相变记忆
%K 化学机制抛光法
%K PCM
%K 钛薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=B798E605A5A503C21420B32FE03FD77C&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=44F41EAA25AF5306&eid=516C537CEEC0FAC3&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=14