%0 Journal Article
%T Various Trap States at SiGe-SiO2 Interface Formed by a Pulsed Laser
%A HUANG Wei-Qi
%A Lü
%A Quan
%A XU Li
%A ZHANG Rong-Tao
%A WANG Hai-Xu
%A JIN Feng
%A
%J 中国物理快报
%D 2009
%I
%X We report fabrication of low-dimensional structures in air by a pulsed laser on SiGe alloy samples in which different oxide structures are formed by laserirradiation and annealing treatment. The micro-structures on SiGe are more complex than those on Si. A series of photoluminescence (PL) emission is observed due to various trap states at the SiGe-SiO2 interface formed under different preparing conditions. The peak centre of PL emission exhibits red-shift from Si to SiGe because of narrower gap. A model for explaining the PLemission is proposed in which the trap states of the interface between some oxide and SiGe play an important role.
%K 68
%K 35
%K -p
%K 61
%K 43
%K Bn
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=9940270F295D372FBCA5ACFE7D01EEE7&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0