%0 Journal Article
%T A Novel Super-Junction Lateral Double-Diffused Metal--Oxide--Semiconductor Field Effect Transistor with n-Type Step Doping Buffer Layer<br>A Novel Super-Junction Lateral Double-Diffused Metal-Oxide-Semiconductor Field Effect Transistor with n-Type Step Doping Buffer Layer
%A CHENG Jian-Bing
%A ZHANG Bo
%A DUAN Bao-Xing
%A LI Zhao-Ji
%A <br>成建兵
%A 张波
%A 段宝兴
%A 李肇基
%J 中国物理快报
%D 2008
%I 
%X A novel super-junction lateral double-diffused metal-oxide--semiconductor field effect transistor （SJ-LDMOSFET） with n-type step doping buffer layer is proposed. The step doping buffer layer almost completely eliminates the substrate-assisted depletion effect, modulates lateral electric field and achieves nearly uniform surface field. On the other hand, the buffer layer also provides another conductive path and reduces on-state resistance. In short, the proposed LDMOSFET improves trade-off performance between breakdown voltage （B V） and specific on-state resistance Ron,sp. Compared with the conventional SJ-LDMOSFET, the simulation results indicate that the BV of the SSJ-LDMOSFET is increased from saturation voltage 121.7V to 644.9 V; at the same time, the specific on-state resistance is decreased from 0.314 Ω.cm^2 to 0.14 Ω.cm^2 by virtue of 3D numerical simulations using ISE when the drift region length and the step number are taken as 48μm and 3, respectively.
%K 73
%K 40
%K Qv
%K 71
%K 20
%K Mq<br>金属氧化物半导体场效应晶体管
%K 缓冲层
%K 半导体器件
%K n型掺杂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=F3981215FBF268228525DD6DEFF373A3&yid=67289AFF6305E306&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=30897FA31CA3354D&eid=FDC7AF55F77D8CD4&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=12