%0 Journal Article
%T Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon
%A ZHU Xin
%A YANG De-Ren
%A LI Ming
%A CHEN Tao
%A WANG Lei
%A QUE Duan-Lin
%A <br>朱鑫
%A 杨德仁
%A 李明
%A 陈涛
%A 汪雷
%A 阙端麟
%J 中国物理快报
%D 2008
%I 
%X The minority carrier lifetime of as-grown germanium-doped Czochralski (GCZ) silicon wafers doped with germanium concentrations Ge]=1016--1018cm-3 isinvestigated in comparison with conventional CZ silicon samples. It is found that the lifetime distribution along the ingot changes with the variation of Ge]. There is a critical value of Ge] = 1016cm-3 beyond which Ge can obviously influence the lifetime of as-grown ingots. This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors (TDs) and electrically active Ge-relatedcomplexes. The related formation mechanisms and distributions are also discussed.
%K 61
%K 72
%K Cc
%K 61
%K 72
%K Yx
%K 71
%K 55
%K Cn<br>硅
%K 锗掺杂
%K 少数载流子存在期
%K 晶粒生长
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=2EA969C9F21029FA604083F6146F5BA8&yid=67289AFF6305E306&vid=C5154311167311FE&iid=0B39A22176CE99FB&sid=7004BE6E41AAF52C&eid=E4BEEBB9A80BC67E&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0