%0 Journal Article
%T Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy<br>
%A HAO Xiao-Peng
%A ZHOU Chun-Lan
%A WANG Bao-Yi
%A WEI Long
%A <br>
%J 中国物理快报
%D 2009
%I 
%X Si-rich SiO2 films prepared by rf magnetron co-sputtering method are studied by slow positron beams. The negatively charge point defects (probably Pb centres or peroxy radicals) at the silicon nanocluster (nc-Si)/SiO2 interface are observed by Doppler broadening spectra. Coincidence Doppler-broadening spectra show that positrons have a higher annihilation probability with core electrons nearby oxygen atoms than silicon atoms. The formation of N-related bonds may be the reason for the prevention of the migration reaction of Si and O atoms, hence nc-Si formation is inhibited by annealing in nitrogen compared to in vacuum.
%K 61
%K 10
%K Nz
%K 61
%K 46
%K Bc
%K 78
%K 70
%K Bj<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=F8E55009CCB591DC4638DB3F66D12EEE&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=E158A972A605785F&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0