%0 Journal Article
%T High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100nm<br>
%A LV Shi-Long
%A SONG Zhi-Tang
%A ZHANG Ting
%A FENG Song-Lin
%A <br>
%J 中国物理快报
%D 2008
%I 
%K 84
%K 37
%K +q
%K 85
%K 30
%K De
%K 85
%K 40
%K Hp<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=B44998DC08601FE47182B42AD319A233&yid=67289AFF6305E306&vid=C5154311167311FE&iid=708DD6B15D2464E8&sid=78040EB2472903C3&eid=0BCE678F960401DF&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0