%0 Journal Article
%T Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices
%A WANG Bao-Zhu
%A WANG Xiao-Liang
%A HU Guo-Xin
%A RAN Jun-Xue
%A WANG Xin-Hua
%A GUO Lun-Chun
%A XIAO Hong-Ling
%A LI Jian-Ping
%A ZENG Yi-Ping
%A LI Jin-Min
%A WANG Zhan-Guo
%A <br>王保柱
%A 王晓亮
%A 胡国新
%A 冉军学
%A 王新华
%A 郭伦春
%A 肖红领
%A 李建平
%A 曾一平
%A 李晋闽
%A 王占国
%J 中国物理快报
%D 2006
%I 
%X Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition （MOCVD） Rapid thermal annealing （RTA） treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AIGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 ×10^3 Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7 × 10^17 cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.
%K 61
%K 72
%K Vv
%K 81
%K 15
%K Gh<br>退火
%K 掺杂镁
%K 超晶格
%K X射线衍射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=57244D0B4B39B32E196D0419CFCCDEFA&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=5BE42E3678D12170&eid=4B5EFEE8F5D7C671&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=14