%0 Journal Article
%T Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method
%A ZHU Li-Na
%A CHEN Xiao-Long
%A YANG Hui
%A PENG Tong-Hua
%A NI Dai-Qin
%A HU Bo-Qing
%A <br>朱丽娜
%A 陈小龙
%A 杨慧
%A 彭同华
%A 倪代秦
%A 胡伯清
%J 中国物理快报
%D 2006
%I 
%X We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.
%K 81
%K 10
%K Bk
%K 81
%K 40
%K z
%K 61
%K 72
%K Cc<br>热处理
%K 品质
%K SiC薄膜
%K 晶体生长
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=C933750D8145B9837817E2E5E914A9F4&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=3302AD544DACF3B0&eid=E5322D16BA846136&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=18