%0 Journal Article %T Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method %A ZHU Li-Na %A CHEN Xiao-Long %A YANG Hui %A PENG Tong-Hua %A NI Dai-Qin %A HU Bo-Qing %A
朱丽娜 %A 陈小龙 %A 杨慧 %A 彭同华 %A 倪代秦 %A 胡伯清 %J 中国物理快报 %D 2006 %I %X We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals. %K 81 %K 10 %K Bk %K 81 %K 40 %K z %K 61 %K 72 %K Cc
热处理 %K 品质 %K SiC薄膜 %K 晶体生长 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=C933750D8145B9837817E2E5E914A9F4&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=3302AD544DACF3B0&eid=E5322D16BA846136&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=18