%0 Journal Article
%T MOCVD Growth and Characterization of Epitaxial AlxGa1-x N Films<br>MOCVD Growth and Characterization of Epitaxial AlxGa1-xN Films
%A LI Liang
%A ZHANG Rong
%A XIE Zi-Li
%A ZHANG Yu
%A XIU Xiang-Qian
%A LIU Bin
%A CHEN Lin
%A YU Hui-Qiang
%A HAN Ping
%A GONG Hai-Mei
%A ZHENG You-Dou
%A <br>李亮
%A 张荣
%A 谢自力
%A 张禹
%A 修向前
%A 刘斌
%A 陈琳
%A 俞慧强
%A 韩平
%A 龚海梅
%A 郑有炓
%J 中国物理快报
%D 2007
%I 
%X We study the growth of AlxGa1-x N epilayers on （0001） sapphire by low-pressure MOCVD, using a lowtemperature AIN buffer. By varying the input flow rates of trimethylgallium （TMGa）, we obtain crack-free AlGaN films in the whole range of composition. A linear relationship between gas and solid Al content is observed. The structural properties of the layers （x =0- 1） are investigated by x-ray diffraction, atomic force microscopy （AFM） and scanning electron microscopy （SEM）. It is found that a two-direction growth appears along the c-axis and the （1011） directions for x ≥ 0.45. From the results of Raman spectroscopy, we suggest that the compressive stain and the lack of mobility orAl adatoms can induce the formation of （1011） grains.
%K 81
%K 15
%K Gh
%K 61
%K 66
%K Dk
%K 78
%K 30
%K Ly
%K 61
%K 10
%K Nz<br>AlxGa1-xN
%K 薄膜
%K 取向附生
%K MOCVD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D480818C6102868401AC3D3&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=94C357A881DFC066&sid=532CB3FA5DC08D32&eid=D3EC5D34434DACC5&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0