%0 Journal Article
%T Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance
%A CAI Yan-Fei
%A ZHOU Peng
%A LIN Yin-Yin
%A TANG Ting-Ao
%A CHEN Liang-Yao
%A LI Jing
%A QIAO Bao-Wei
%A LAI Yun-Feng
%A FENG Jie
%A CAI Bing-Chu
%A CHEN Bomy
%A <br>蔡燕飞
%A 周鹏
%A 林殷茵
%A 汤庭鳌
%A 陈良尧
%A 李晶
%A 乔保卫
%A 赖云峰
%A 冯洁
%A 蔡炳初
%A 陈邦民
%J 中国物理快报
%D 2007
%I 
%X Electrical properties and phase structures of （Si＋N）-codoped Oe2Sb2Te5 （GST） for phase change memory are investigated to improve the memory performance. Compared to the films with N or Si dopants only in previous reports, the （Si＋N）-doped GST has a remarkable improvement of crystalline resistivity of about 104mΩcm. The Fourier-transform infrared spectroscopy spectrum reveals the Si-N bonds formation in the film. X-ray diffraction patterns show that the grain size is reduced due to the crystallization inhibition of the amorphous GST by SiNx, which results in higher crystalline resistivity. This is very useful to reduce writing current for phase change memory applications.
%K 61
%K 43
%K Dq
%K 61
%K 72
%K Ww
%K 81
%K 30
%K Hd
%K 84
%K 37
%K +q<br>氮
%K 微电子物理学
%K 薄膜物理学
%K 性能
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=A6F1F92187EC7BB8730A34806A855267&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=38B194292C032A66&sid=DBEE434FCBFED297&eid=839A12D3ACF8C715&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0