%0 Journal Article %T Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers %A YAO Fei %A XUE Chun-Lai %A CHENG Bu-Wen %A WANG Qi-Ming %A
姚飞 %A 薛春来 %A 成步文 %A 王启明 %J 中国物理快报 %D 2007 %I %X Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain--Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors. %K 71 %K 20 %K Nr %K 71 %K 55 %K Ak %K 71 %K 70 %K Fk
硼 %K 能带隙 %K 断面收缩 %K 分子分层 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D4808189C13CB86B78C850F&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=B31275AF3241DB2D&sid=0D56350A4FA1FCC9&eid=4858DFA42406A0F9&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0