%0 Journal Article
%T Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers
%A YAO Fei
%A XUE Chun-Lai
%A CHENG Bu-Wen
%A WANG Qi-Ming
%A <br>姚飞
%A 薛春来
%A 成步文
%A 王启明
%J 中国物理快报
%D 2007
%I 
%X Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain--Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.
%K 71
%K 20
%K Nr
%K 71
%K 55
%K Ak
%K 71
%K 70
%K Fk<br>硼
%K 能带隙
%K 断面收缩
%K 分子分层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D4808189C13CB86B78C850F&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=B31275AF3241DB2D&sid=0D56350A4FA1FCC9&eid=4858DFA42406A0F9&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0