%0 Journal Article
%T Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects<br>Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots： Strong Built-in Electric Field Effects
%A CHI Yue-Meng
%A SHI Jun-Jie
%A <br>池月萌
%A 史俊杰
%J 中国物理快报
%D 2006
%I 
%X Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field (BEF) in the wurtzite InGaN strained coupled quantum dots (QDs), the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF, and the structure parameters of the QD system.
%K 73
%K 21
%K La
%K 71
%K 35
%K -y
%K 77
%K 65
%K Ly
%K 77
%K 84
%K Bw<br>间带
%K 光学跃迁
%K 纤维锌矿
%K 量子点
%K 电场效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=8FFDFC0A505937B6B4B1262879FC62DF&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=62486607C4A4CE2B&eid=608D8D57E0937F1A&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=24