%0 Journal Article %T Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects
Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects %A CHI Yue-Meng %A SHI Jun-Jie %A
池月萌 %A 史俊杰 %J 中国物理快报 %D 2006 %I %X Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field (BEF) in the wurtzite InGaN strained coupled quantum dots (QDs), the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF, and the structure parameters of the QD system. %K 73 %K 21 %K La %K 71 %K 35 %K -y %K 77 %K 65 %K Ly %K 77 %K 84 %K Bw
间带 %K 光学跃迁 %K 纤维锌矿 %K 量子点 %K 电场效应 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=8FFDFC0A505937B6B4B1262879FC62DF&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=62486607C4A4CE2B&eid=608D8D57E0937F1A&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=24